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www.irf.com 1 12/18/08 irfs5615pbf IRFSL5615PBF notes through are on page 2
features ? key parameters optimized for class-d audio amplifier applications ? low r dson for improved efficiency ? low q g and q sw for better thd and improved efficiency ? low q rr for better thd and lower emi ? 175c operating junction temperature for ruggedness ? can deliver up to 300w per channel into 4 ? load in half-bridge configuration amplifier description this digital audio mosfet is specifically designed for class-d audio amplifier applications. this mosfet utilizes the latest processing techniques to achieve low on-resistance per silicon area. furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-d audio amplifier performance factors such as efficiency, thd and emi. additional features of this mosfet are 175c operating junction temperature and repetitive avalanche capability. these features combine to make this mosfet a highly efficient, robust and reliable device for classd audio amplifier applications. s d g gds gate drain source s d g d d s g d 2 pak irfs5615pbf to-262 IRFSL5615PBF v ds 150 v r ds(on) typ. @ 10v 34.5 m q g typ. 26 nc q sw typ. 11 nc r g(int) typ. 2.7 ? t j max 175 c key parameters absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c power dissipation p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.045 r ja junction-to-ambient (pcb mount) ??? 40 c/w c a v w 144 72 0.96 -55 to + 175 300 max. 24 140 20 150 33

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.51mh, r g = 25 ? , i as = 21a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. limited by tjmax. see figs. 14, 15, 17a, 17b for repetitive avalanche information when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 150 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.18 ??? v/c r ds(on) static drain-to-source on-resistance ??? 34.5 42 m ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -13 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 g fs forward transconductance 35 ??? ??? s q g total gate charge ??? 26 40 q gs1 pre-vth gate-to-source charge ??? 6.4 ??? q gs2 post-vth gate-to-source charge ??? 2.2 ??? q gd gate-to-drain charge ??? 9.0 ??? q godr gate charge overdrive ??? 8.9 ??? see fig. 6 and 19 q sw switch charge (q gs2 + q gd ) ??? 11 ??? r g(int) internal gate resistance ??? 2.7 5.0 ? t d(on) turn-on delay time ??? 8.9 ??? t r rise time ??? 23.1 ??? t d(off) turn-off delay time ??? 17.2 ??? t f fall time ??? 13.1 ??? c iss input capacitance ??? 1750 ??? c oss output capacitance ??? 155 ??? c rss reverse transfer capacitance ??? 40 ??? c oss effective output capacitance ??? 175 ??? l d internal drain inductance between lead, 6mm (0.25in.) l s internal source inductance from package avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a e ar repetitive avalanche ener g y mj diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 80 120 ns q rr reverse recovery charge ??? 312 468 nc ??? 109 see fig. 14, 15, 17a, 17b i d = 21a typ. max. ? = 1.0mhz, see fig.5 pf nh 4.5 t j = 25c, i f = 21a, v r =120v di/dt = 100a/s t j = 25c, i s = 21a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 21a v ds = v gs , i d = 100a v ds = 150v, v gs = 0v v gs = 0v, v ds = 0v to 120v v ds = 150v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v i d = 21a v gs = 0v mosfet symbol r g = 2.4 ? v ds = 50v, i d = 21a conditions and center of die contact v dd = 75v, v gs = 10v v ds =75v v ds = 50v a na nc ns ??? ??? ??? ??? 7.5 ??? ??? ??? a 33 140 ???

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 21a v gs = 10v 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v vds= 30v i d = 21a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 60s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 60s pulse width tj = 175c 5.0v 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v 60s pulse width

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250ua id = 1.0ma id = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.02324 0.000008 0.26212 0.000106 0.50102 0.001115 0.25880 0.005407 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 175 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 i d , d r a i n c u r r e n t ( a )

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long as neither tjmax nor iav (max) is exceeded 3. equation below based on circuit and waveforms shown in figures 17a, 17b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. b v = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 21a t j = 25c t j = 125c 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.8a 5.3a bottom 21a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 21a

6 www.irf.com fig 18a. switching time test circuit fig 18b. switching time waveforms fig 17b. unclamped inductive waveforms fig 17a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. gate charge test circuit fig 19b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16.

for n-channel hexfet power mosfets d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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note: for the most current drawing please refer to ir website at http://www.irf.com/package/

8 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches)

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## note: for the most current drawing please refer to ir website at http://www.irf.com/package/

www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/2008
dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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